发明名称 |
Fine line printing by trimming the sidewalls of pre-developed resist image |
摘要 |
A method of forming a feature pattern in a photosensitive layer includes forming the photosensitive layer on a substrate, providing a first mask having a first opaque area thereon, and performing a first exposure process with a first dose to form a first unexposed image in the photosensitive layer. The method further includes performing a second exposure process with a second dose to expose sidewalls of the first unexposed image so that the sidewalls of the first unexposed image receive at least a portion of the second dose thus forming a second unexposed image in the photosensitive layer, and developing the photosensitive layer with a developing process to form the feature pattern and to create features having smaller widths than those which would result in developing the photosensitive layer of the first unexposed image.
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申请公布号 |
US2004170929(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030643000 |
申请日期 |
2003.08.18 |
申请人 |
YANG TA-HUNG;YANG CHIN-CHENG;CHANG CHING-YU |
发明人 |
YANG TA-HUNG;YANG CHIN-CHENG;CHANG CHING-YU |
分类号 |
G03F7/20;G03F7/26;H01L21/302;H01L21/461;(IPC1-7):G03F7/26 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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