发明名称 Fine line printing by trimming the sidewalls of pre-developed resist image
摘要 A method of forming a feature pattern in a photosensitive layer includes forming the photosensitive layer on a substrate, providing a first mask having a first opaque area thereon, and performing a first exposure process with a first dose to form a first unexposed image in the photosensitive layer. The method further includes performing a second exposure process with a second dose to expose sidewalls of the first unexposed image so that the sidewalls of the first unexposed image receive at least a portion of the second dose thus forming a second unexposed image in the photosensitive layer, and developing the photosensitive layer with a developing process to form the feature pattern and to create features having smaller widths than those which would result in developing the photosensitive layer of the first unexposed image.
申请公布号 US2004170929(A1) 申请公布日期 2004.09.02
申请号 US20030643000 申请日期 2003.08.18
申请人 YANG TA-HUNG;YANG CHIN-CHENG;CHANG CHING-YU 发明人 YANG TA-HUNG;YANG CHIN-CHENG;CHANG CHING-YU
分类号 G03F7/20;G03F7/26;H01L21/302;H01L21/461;(IPC1-7):G03F7/26 主分类号 G03F7/20
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