| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing an etching to a semiconductor layer at the bent part of a gate electrode. SOLUTION: The semiconductor device includes a supporting board 3, and an element separation insulating film 4 for separating an element region arranged within the supporting board. A first gate insulating film 11 and a second gate insulating film 12 having a film thickness thicker than that of the first gate insulating film are arranged on the supporting board within an element region. The gate electrode G has a first part Ga extending in a first direction on the first gate insulating film, and a second part Gb extending from the first part in a second direction different from the first direction. A part forming an internal angle of the first part and the second part is arranged on the second gate insulating film. Source/drain diffusion layers S, D are formed within the supporting board so as to sandwich a channel region under the first part of the gate electrode. COPYRIGHT: (C)2004,JPO&NCIPI
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