NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE AS WELL AS NONVOLATILE MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an MONOS type or an MNOS type nonvolatile memory element capable of arbitrarily setting the retaining characteristic of data with a high accuracy, and to provide the manufacturing method thereof. SOLUTION: The nonvolatile memory element 3 is provided with a gate electrode 16 via an insulating film 15a in which a first potential barrier layer 12a, an electric charge accumulating layer 13 and a second potential barrier layer 14 are laminated sequentially on a semiconductor substrate 11 through a gate electrode 16. Nitrogen is contained in the potential barrier layer 12a and the data retaining time is arbitrarily set by the containing amount of the nitrogen. COPYRIGHT: (C)2004,JPO&NCIPI