发明名称 POLISHING COMPOSITION AND POLISHING METHOD USING SAME
摘要 PROBLEM TO BE SOLVED: To provide polishing composition and polishing method using the same wherein the occurrence of polishing flaws and adhesion of solid element and the liquid used for the polishing can be wasted easily. SOLUTION: The polishing composition is formed of a liquid including water in which at least an element selected from triethylenetetramine and tetraethylenepenthamine is fused. Moreover, the composition includes an insulating film which is formed of silicon oxide and is provided with wiring grooves at the surface thereof, and a conductive film formed of polycrystal silicon over the insulating film. The wiring groove is perfectly or partially filled with the conductive film and the conductive film is polished until the insulating film at the areas other than the wiring groove is exposed. The preferable content of at least an element selected from the tryethylenetetramine and tetraethylenepenthamine in the polishing composition is 0.001 to 10 weight %. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004247428(A) 申请公布日期 2004.09.02
申请号 JP20030034212 申请日期 2003.02.12
申请人 FUJIMI INC 发明人 ASANO HIROSHI;HORI TETSUJI
分类号 C09K3/14;C09G1/02;H01L21/304;H01L21/321;H01L21/768;(IPC1-7):H01L21/304 主分类号 C09K3/14
代理机构 代理人
主权项
地址