SOLID STATE IMAGING ELEMENT AND ITS MANUFACTURING METHOD AND PORTABLE ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a solid state imaging element having excellent mass productivity by suppressing the variations of the sensitivity of a photodetecting diode and securing a sufficient margin for the alignment deviation. SOLUTION: The solid state imaging element has a p-type well region 16 provided on an n-type layer 15 provided on a p-type substrate 14, and a plurality of unit pixels 10A each having the photodetecting region of the photodetecting diode 11 and the charge storage region 17 of a MOS transistor 12 in the p-type well region 16. The method for manufacturing the solid state imaging element includes a step of simultaneously forming the p-type well region 16 in the same impurity introducing step over the forming region of the photodetecting diode 11 and the forming region of the MOS transistor 12. COPYRIGHT: (C)2004,JPO&NCIPI