| 摘要 |
PROBLEM TO BE SOLVED: To improve recording holding characteristic in passage of time in a nonvolatile semiconductor recording device such as MONOS type or MNOS type or the like. SOLUTION: A first insulation layer 21 made of SiO<SB>2</SB>, a second insulation layer 22 made of SiN, and a third insulation layer 23 made of SiN, are stacked in sequence from the side of a substrate to form a gate insulation film of stacking structure. The hydrogen bonding density of the third insulation layer 23 is made lower than that of the second insulation layer 22. Hydrogen atoms of the second insulation layer functioning mainly as a charge storage means can be prevented from diffusion, so that recording holding characteristic in passage of time can be improved. COPYRIGHT: (C)2004,JPO&NCIPI
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