| 发明名称 |
SEMICONDUCTOR SUBSTRATE, METHOD FOR FABRICATING THE SUBSTRATE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate in which step differences are restrained on a substrate after CMP. SOLUTION: In a semiconductor substrate having a notch at an end, both shoulders of the notch are arcuate respectively, and difference of curvature between respective shoulders is 0 mm to 0.1 mm. COPYRIGHT: (C)2004,JPO&NCIPI
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| 申请公布号 |
JP2004247712(A) |
申请公布日期 |
2004.09.02 |
| 申请号 |
JP20030427402 |
申请日期 |
2003.12.24 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HIDAKA YOSHIHARU;IKENOUCHI KATSUYUKI |
| 分类号 |
H01L21/76;H01L21/02;H01L21/304;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/76 |
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