| 摘要 |
A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1-X1-Y1N, where 0<X1, 0<=Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1-X2-Y2N, where 0<X2, 0<=Y2 and X2+Y2<1. The Al composition (X2) of barrier layer is equal to or smaller than that (X1) of well layer.
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