发明名称 |
Methods of polishing, interconnect-fabrication, and producing semiconductor devices |
摘要 |
The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water. |
申请公布号 |
US2004171264(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040793735 |
申请日期 |
2004.03.08 |
申请人 |
RENESAS TECHNOLOGY CORPORATION |
发明人 |
KONDO SEIICHI;SAKUMA NORIYUKI;HOMMA YOSHIO |
分类号 |
B24B37/00;B24B37/04;C09G1/02;C09K3/14;C09K13/00;H01L21/302;H01L21/304;H01L21/3065;H01L21/3205;H01L21/321;H01L21/461;H01L21/4763;H01L21/768;H01L21/8238;H01L23/52;H01L23/532;(IPC1-7):H01L21/302 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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