发明名称 |
Contacts to semiconductor fin devices |
摘要 |
A method for forming a contact to a semiconductor fin which can be carried out by first providing a semiconductor fin that has a top surface, two sidewall surfaces and at least one end surface; forming an etch stop layer overlying the fin; forming a passivation layer overlying the etch stop layer; forming a contact hole in the passivation layer exposing the etch stop layer; removing the etch stop layer in the contact hole; and filling the contact hole with an electrically conductive material. |
申请公布号 |
US2004169269(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030377479 |
申请日期 |
2003.02.27 |
申请人 |
YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING |
发明人 |
YEO YEE-CHIA;YANG FU-LIANG;HU CHENMING |
分类号 |
H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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