III-GROUP NITRIDE LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF TO PROTECT LIGHT EMITTING DIODE FROM STATIC ELECTRICITY AND REVERSE OVER-VOLTAGE

摘要

PURPOSE: A III-group nitride light emitting diode is provided to protect a light emitting diode from static electricity and a reverse over-voltage by preventing a p-n junction from being broken by a reverse voltage applied to the light emitting diode. CONSTITUTION: A buffer layer and an insulation layer are sequentially formed on a substrate. The first n-type AlGaLnN layer is formed on the insulation layer. The first active layer is formed on the first n-type AlGaLnN layer. The first p-type AlGaLnN layer is formed on the first active layer. A transparent electrode is formed on the first p-type AlGaLnN layer. The first p-type electrode is formed on the transparent electrode. The first n-type electrode is formed on the first n-type AlGaLnN layer. The second n-type AlGaLnN layer is formed on the insulation layer. The second active layer is formed on the second n-type AlGaLnN layer. The second p-type AlGaLnN layer is formed on the second active layer. A p-type metal electrode is formed on the second p-type AlGaLnN layer, and the p-type metal electrode and the second p-type AlGaLnN layer forms a Schottky diode. The second p-type electrode is formed on the p-type metal electrode. The second n-type electrode is formed on the second n-type AlGaLnN layer. A passivation layer electrically insulates the first n-type electrode from the second n-type electrode. The first metal interconnection(12) connects the first p-type electrode and the second n-type electrode. The second metal interconnection(13) connects the first n-type electrode and the second p-type electrode.