| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide maskless selective film deposition which solves problems, e.g., wherein fluorine compound gas dominates mainly in an etching mode and is unsuitable for film deposition because the gas contains fluorine having a high electronegativity and wherein on selective film deposition using the gas, a mask and a patterning step thereof are required, and the influence of a mask removal solution and limitation on the constitution of general optical apparatuses often occur. <P>SOLUTION: In a plasma processing method comprising a step of deposing a film, an injection layer is deposited on the surface of a substrate, so that an etching rate and a deposition rate are reversed. Since the deposition rate is made dominant, film deposition is made possible even with the use of fluorine compound gas as etching gas, and further, maskless selective film deposition is realized since a part to be deposited and a part not to be deposited are made by partially depositing the injection layer. The low-cost and highly reliable plasma processing method and apparatus in which man-hour in the film deposition step is reduced and a product using them are provided. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
