| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a SONOS memory cell and a method for fabricating the cell. <P>SOLUTION: The memory cell includes a source region and a drain region formed in a semiconductor substrate spaced apart at predetermined intervals from each other. An insulating layers for storing electric charges are formed on edges of a channel region adjacent to the source region and the drain region. A gate insulating film is formed on the channel region between the electric charge insulating layers, and a gate electrode is formed on the gate insulating film and the insulating layer for storing the charges. The method for fabricating the element includes sequentially stacking a multi-layer insulating layer, lower conductive film, and hard mask layer. The hard mask layer, lower conductive film, and multi-layer insulating film are sequentially patterned to form a gap region. A gate oxide film is formed on the semiconductor substrate and the lower conductive film exposed in the gap region, and a gate pattern filling the gap region is formed on the gate oxide film. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
