发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To solve such a problem that an excessive thermal stress is caused by high temperature heating of a semiconductor element and a wiring substrate upon joining together and the joint is peeled off when the semiconductor element is connected to the wiring substrate. <P>SOLUTION: Pit-shaped electrodes are formed on the wiring board, projection electrodes on the semiconductor element are inserted into the pit electrodes to be connected with each other while applying ultrasonic vibration thereto. When the projection electrodes on the semiconductor element are inserted into the pit electrodes formed on the wiring board together with the ultrasonic vibration, a synergistic action with the ultrasonic vibration causes friction with the metallic film provided on the periphery of the pit electrode to be promoted, so that different surfaces of the both are exposed and joined together, thus enabling reduction of the joint temperature. As a result, an excessive thermal stress can be prevented from being generated in the joint and thus such a problem as peel-off can be avoided. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004247621(A) 申请公布日期 2004.09.02
申请号 JP20030037581 申请日期 2003.02.17
申请人 RENESAS TECHNOLOGY CORP 发明人 KOIZUMI MASAHIRO;KAJIWARA RYOICHI;TAKAHASHI KAZUYA;SHINODA MASAYOSHI;KONISHI SATOSHI
分类号 H01L21/60;H01L21/607;(IPC1-7):H01L21/60 主分类号 H01L21/60
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