| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film forming method and apparatus, and the cleaning treatment method of the apparatus, wherein when forming a film, reaction products are suppressed from adhering to the gap between its earth shield and its high-frequency electrode, and further, they are removed easily even though their adherence occurs. SOLUTION: In the thin-film forming apparatus, a high-frequency electrode has a formed reaction-gas flow passage (a main flow passage 15) for exhausting a reaction gas from the hollow portion thereof to an ground electrode, and there is provided an earth shield 3 for surrounding the side and rear surfaces of the high-frequency electrode with a predetermined gap in between. Further, in addition to the main flow passage 15, there is formed an auxiliary flow passage 16 of the reaction gas wherein the reaction gas is so introduced into the gap between the earth shield and the side/rear surfaces of the high-frequency electrode as to exhaust the reaction gas from the gap between the earth shield and the side surface to the ground-electrode side. When forming a thin film, the reaction gas is so exhausted further from the gap of the auxiliary flow passage as well as from the main flow passage to the ground electrode as to form the thin film. COPYRIGHT: (C)2004,JPO&NCIPI
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