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发明名称
半导体基板的切断方法
摘要
使产生多光子吸收而在矽晶圆11之内部形成藉熔融处理领域13所造成之切断预定部9后将黏贴在矽晶圆11上之黏着片20伸展。藉此,沿着切断预定部9以良好精确度将矽晶圆11切断成半导体晶片25。这时,相邻之半导体晶片25、25成对向之切断面25a、25a系从密着状态分开之故,双面黏结树脂层23也沿着切断预定部9切断。是于,相较于用刀片切断矽晶圆11及双面黏结树脂层23而不切断底材21之情形,能以极佳之效率切断矽晶圆11及双面黏结树脂层23。
申请公布号
TW200416954
申请公布日期
2004.09.01
申请号
TW092125000
申请日期
2003.09.10
申请人
滨松赫德尼古斯股份有限公司
发明人
福世文嗣;福满宪志;内山直己;杉浦隆二
分类号
H01L21/78
主分类号
H01L21/78
代理机构
代理人
何金涂;何秋远
主权项
地址
日本
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