COPPER ELECTROPLATING METHOD, PURE COPPER ANODE FOR COPPER ELECTROPLATING AND SEMICONDUCTOR WAFER PLATED THEREBY WITH LITTLE PARTICLE ADHESION

摘要

The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 mu m or less or 60 mu m or more or a non-recrystallized anode. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.