PHASE TRANSITION MEMORY CELL AND FABRICATING METHOD THEREOF TO FORM THIN LOWER ELECTRODE

摘要

PURPOSE: A phase transition memory cell and a fabricating method thereof are provided to reduce the power consumption by forming a thin lower electrode and reducing a contact region. CONSTITUTION: A transistor includes a source region(61s',61s") connected to a source contact, a drain region(61d) connected to a drain contact, and a gate electrode(57a,57b). A variable resistor includes the first electrode, the second electrode, and a phase transition material layer inserted therebetween. The second electrode includes an upper end, a lower end, and a sidewall. The phase transition material layer is used for covering a part of the sidewall of the second electrode. The second electrode is electrically connected to one of the source contact and the drain contact.