Fabricator of epitaxial silicon carbide layers on substrates includes a carburising reactor, a pumping system and a gas distributor with a furnace

摘要

The fabricator of epitaxial silicon carbide layers on substrates has a carburising reactor, a pumping system, and a gas distributor. The economical fabricator gives carburising at 1100-1300 [deg] C, through passage of a gaseous hydrocarbon and hydrogen mixture over the silicon substrate heated via a furnace. Argon, nitrogen and vacuum are employed in the purging or cleaning cycles.