SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

When a semiconductor device using fluorine-containing carbon films (CF films) 21, 22, 23 as inter-layer dielectric films is fabricated using boron nitride films (BN films) as hard masks 31, 32, 33, total inter-wiring capacitance of the semiconductor device can be made low. After a first CF film 21 as an inter-layer dielectric film is stacked, a hard mask 31 composed of a BN film is stacked on the CF film 21, and thereafter selectively removed by etching to form a predetermined groove pattern. The CF film 21 is next etched by using the hard mask 31 as a mask to form grooves for forming wiring layers 51. Then, Cu is buried into the grooves to complete the semiconductor device. Since this semiconductor device uses the CF film and the BN film having low relative dielectric constants, the relative dielectric constant of the entire semiconductor device can be made low. As a result, its total inter-wiring capacitance can be made low as well.