| 发明名称 |
NITRIDING METHOD FOR INSULATION FILM, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD |
| 摘要 |
A method of nitriding an insulation film includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film. <IMAGE> <IMAGE>
|
| 申请公布号 |
EP1453083(A1) |
申请公布日期 |
2004.09.01 |
| 申请号 |
EP20020786046 |
申请日期 |
2002.12.05 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
IGETA, MASANOBU;AOYAMA, SHINTARO;SHINRIKI, HIROSHI;TAKAHASHI, TSUYOSHI |
| 分类号 |
H01L21/318;H01L21/00;H01L21/28;H01L21/31;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/318 |
主分类号 |
H01L21/318 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
