| 摘要 |
The invention relates to a voltage regulation system for multiword programming in non volatile memories, for example of the Flash type, with low circuit area occupation, wherein memories comprise at least a memory cell matrix (5) organised in cell rows and columns and with corresponding circuits responsible for addressing, decoding, reading, writing and erasing the memory cell content. Memory cells have drain terminals (D) connected to matrix columns and biased in the programming step with a predetermined voltage value by means of program load circuits (2) associated to each matrix column; advantageously, the invention provides, in parallel with each program load circuit (2), a conduction-to-ground path (9) enabled by a controlled active element (10). <IMAGE>
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