| 摘要 |
A semiconductor device and a method for manufacturing the semiconductor device with a self-aligned contact, is described. A first conductor and a second conductor are formed on the surface of the semiconductor substrate. The first conductor and the second conductor are encapsulated with a first encapsulation and a second encapsulation, respectively. The first encapsulation and the second encapsulation contain titanium oxide, boron nitride, silicon carbide, magnesium oxide or carbon. The first encapsulation and the second encapsulation are suitable as a self-aligning etch mask for etching a self-aligned contact hole between the first conductor and the second conductor.
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