METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE TO PREVENT METAL CORRODANT

摘要

PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent metal from being corroded by forming a spacer on the sidewall of a lower metal layer and by preventing an aluminum layer under the spacer from being exposed to oxygen in the atmosphere. CONSTITUTION: After a diffusion blocking aluminum layer and an ARC(anti-reflective coating) are sequentially formed on a semiconductor substrate(200), a patterning process is performed to form a metal layer. A metal material is deposited. After the metal material is etched to form a spacer on the sidewall of the metal layer, an interlayer dielectric(210) is deposited. A predetermined etch process is performed on the interlayer dielectric to form a via hole.