CZOCHRALSKI PULLER FOR FABRICATING SINGLE CRYSTAL SILICON INGOT

摘要

PURPOSE: A Czochralski puller for fabricating a monocrystalline silicon ingot is provided to decrease a slip potential in a device region of a wafer and reduce sublimation of silicon dioxide in an RTA(rapid thermal annealing) chamber. CONSTITUTION: A chamber sealing body is prepared. A crucible in the chamber sealing body contains melted silicon. A seed holder in the sealing body is adjacent to the crucible to retain a seed crystal. A heater surrounds the crucible in the sealing body. Inner and outer heat intercepting housing walls are separated from each other. A heat intercepting housing cover and a heat intercepting housing bottom are connected to the inner and outer heat intercepting housing walls. The heat intercepting housing cover is upward tilted from the inner heat intercepting housing wall to the heat intercepting housing bottom. The heat intercepting housing bottom is downward tilted from the inner heat intercepting housing wall to the outer heat intercepting housing wall. The first portion is adjacent to the inner heat intercepting housing wall. The second portion is downward tilted from the outer heat intercepting housing wall to the inner heat intercepting housing wall, adjacent to the outer heat intercepting housing wall. A ring-type heat intercepting housing includes the inner and outer heat intercepting housing walls, the heat intercepting housing cover, the heat intercepting housing bottom, the first portion and the second portion. A support member supports the heat intercepting housing in the crucible.