| 摘要 |
A plurality of gate electrodes is formed on a semiconductor substrate having a DRAM area and a logic area. Next, sidewalls, each of which includes a silicon nitride film covering the sides of gate electrodes and a silicon oxide film covering the silicon nitride film, are formed on the sides of the gate electrodes respectively. After formation of a transistor having an LDD structure in the logic area, the silicon oxide film formed on the sides of the gate electrodes is removed by wet etching. Next, a silicon nitride film is formed on the whole surface of the semiconductor substrate, and an interlayer dielectric is formed on the silicon nitride film.
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