发明名称 |
Semiconductor nonvolatile storage element and method of fabricating the same |
摘要 |
To provide a semiconductor nonvolatile storage device capable of applying distributed voltage efficiently to a ferroelectric capacitor in a semiconductor nonvolatile storage device having an MFMIS structure without enlarging a memory cell area and a method of fabricating the same, a ferroelectric nonvolatile storage element is constructed by a structure successively laminated with a first insulator layer (3), a first conductor layer (4), a ferroelectric layer (5) and a second conductor layer (6) on a channel region and is constructed by a structure having a third conductor (9) and a fourth conductor (10) respectively laminated on a source region and a drain region, in which the third conductor (9) and the fourth conductor (10) are opposed to each other via the first conductor layer (4) and a second insulator thin film (11).
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申请公布号 |
US6784473(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20020090851 |
申请日期 |
2002.03.04 |
申请人 |
NAT INST OF ADVANCED IND SCIEN;NIPPON PRECISION CIRCUITS |
发明人 |
SAKAI SHIGEKI;SAKAMAKI KAZUO |
分类号 |
H01L21/8247;H01L21/28;H01L21/8246;H01L27/105;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8247 |
代理机构 |
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地址 |
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