发明名称 |
Semiconductor device |
摘要 |
The present invention has provided on a back channel side of the TFT a blocking layer that is formed by laminating a 50 nm to 100 nm thick silicon oxynitride film (A) and a 30 nm to 70 nm thick silicon oxynitride film (B). By forming a lamination structure of such silicon oxynitride films, not only can be the contaminations caused by impurities such as alkali metallic elements from the substrate prevented, but the fluctuations in the electrical characteristics of the TFT can be reduced.
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申请公布号 |
US6784495(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20020291081 |
申请日期 |
2002.11.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
KOYAMA JUN;KITAKADO HIDEHITO;ITOH MASATAKA;OGAWA HIROYUKI |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/312;H01L21/318;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H04N5/66;(IPC1-7):H01L27/01 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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