发明名称 |
Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement |
摘要 |
A new silicon structure is provided. Under a first embodiment of the invention, a first silicon substrate having a <100> crystallographic orientation is bonded to the surface of a second silicon substrate having a <110> crystallographic orientation, the wafer alignment notch of the first and the second silicon substrates are aligned with each other. Under a first embodiment of the invention, a first silicon substrate having a <100> crystallographic orientation is bonded to the surface of a second silicon substrate having a <110> crystallographic orientation, the wafer alignment notch of the first and the second silicon substrates are not aligned with each other.
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申请公布号 |
US6784071(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20030355872 |
申请日期 |
2003.01.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN HAUR-YWH;CHAN YI-LING;YANG KUO-NAN;YANG FU-LIANG;HU CHENMING |
分类号 |
H01L21/762;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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