发明名称 Electrostatic chuck and substrate processing apparatus
摘要 An electrostatic chuck is provided, having an insulation layer including a mount plane on which a wafer is mounted, an inner electrode provided in the insulation layer, and projecting portions protruding from the mount plane which include contact planes that contact the wafer. A backside gas flows into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain the temperature uniformity of the wafer. The total areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to the area of the inner electrode, and the heights of the projecting portions are not less than 5 mum and not more than 10 mum.
申请公布号 US6785115(B2) 申请公布日期 2004.08.31
申请号 US20020057804 申请日期 2002.01.25
申请人 NGK INSULATORS, LTD.;ANELVA CORPORATION 发明人 TSURUTA HIDEYOSHI;YAMADA SATORU;NASHIMOTO KIYOSHI;MIYAZAKI NAOKI
分类号 B23Q3/15;C23C16/458;G03F7/20;H01L21/683;H02N13/00;(IPC1-7):H02N23/00 主分类号 B23Q3/15
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