| 发明名称 |
Silicide process using high K-dielectrics |
| 摘要 |
A method for preventing the thermal decomposition of a high-K dielectric layer of a gate electrode during the formation of a metal silicide on the gate electrode by using nickel as the metal component of the silicide.
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| 申请公布号 |
US6784506(B2) |
申请公布日期 |
2004.08.31 |
| 申请号 |
US20010939744 |
申请日期 |
2001.08.28 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;BESSER PAUL R.;BUYNOSKI MATTHEW S.;FOSTER JOHN CLAYTON;KING PAUL L.;PATON ERIC N. |
| 分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/51;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
| 代理机构 |
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