| 摘要 |
A semiconductor device according to the invention of the present application comprises a first semiconductor layer, a first insulating layer formed over the first semiconductor layer, a second semiconductor layer formed over the insulating layer, a protective element formed over the second semiconductor layer, an electrode pad, and a plurality of series-connected through holes for connecting the electrode pad and the protective element.Thus, a surge voltage applied across a diffused resistor can be lightened and hence an oxide film placed below the diffused resistor can be prevented from destruction.
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