发明名称 |
Phosphorized copper anode for electroplating |
摘要 |
A phosphorized copper anode used for electroplating, including: 20-800 ppm of phosphorus; between 0.1 and less than 2 ppm of oxygen, and the balance being high purity copper having a purity of 99.9999% by mass or higher, wherein the average grain size of the copper anode after recrystallization is in the range between about 10 and 50 mum.
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申请公布号 |
US6783611(B2) |
申请公布日期 |
2004.08.31 |
申请号 |
US20020095050 |
申请日期 |
2002.03.12 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
YAJIMA KENJI;KAKIMOTO AKIHIRO;IKENOYA HIDEYUKI |
分类号 |
C22C9/00;C25D17/10;(IPC1-7):C22C9/00 |
主分类号 |
C22C9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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