发明名称 Phosphorized copper anode for electroplating
摘要 A phosphorized copper anode used for electroplating, including: 20-800 ppm of phosphorus; between 0.1 and less than 2 ppm of oxygen, and the balance being high purity copper having a purity of 99.9999% by mass or higher, wherein the average grain size of the copper anode after recrystallization is in the range between about 10 and 50 mum.
申请公布号 US6783611(B2) 申请公布日期 2004.08.31
申请号 US20020095050 申请日期 2002.03.12
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 YAJIMA KENJI;KAKIMOTO AKIHIRO;IKENOYA HIDEYUKI
分类号 C22C9/00;C25D17/10;(IPC1-7):C22C9/00 主分类号 C22C9/00
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