发明名称 Semiconductor device package with improved cooling
摘要 A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contact layer is then formed over the passivation layer. The individual die are mounted drain side down in a metal clip or can with the drain electrode disposed coplanar with a flange extending from the can bottom. The metal clip or drain clip has a plurality, a parallel spaced fins extending from its outwardly facing surface.
申请公布号 US6784540(B2) 申请公布日期 2004.08.31
申请号 US20020267142 申请日期 2002.10.08
申请人 INTERNATIONAL RECTIFIER CORP. 发明人 CARDWELL CHARLES S.
分类号 H01L23/34;H01L23/31;H01L23/367;H01L23/373;H01L23/433;H01L23/492;(IPC1-7):H01L23/24;H01L23/14;H01L23/10 主分类号 H01L23/34
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