发明名称 Integrated circuit dielectric and method
摘要 A xerogel aging system includes an aging chamber (190) with inlets and outlet and flows a gel catalyst in gas phase over a xerogel precursor film on a semiconductor wafer. Preferred embodiments use an ammonia and water vapor gas mixture catalyst.
申请公布号 US6784121(B1) 申请公布日期 2004.08.31
申请号 US19980178249 申请日期 1998.10.23
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 JIN CHANGMING;LIST RICHARD SCOTT;LUTTMER JOSEPH D.
分类号 C23C18/12;H01L21/3105;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/31;H01L21/469 主分类号 C23C18/12
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