| 摘要 |
A distributed Bragg reflector laser is fabricated wherein material defects are produced in the laser's tuning waveguide region. The defects may be created by introducing impurities into the region. The defects increase the non-radiative recombination rate of injected carriers, thereby decreasing FM efficiency and improving RF performance. Injected carrier electrons are substantially separated from injected carrier holes to reduce bimolecular and Auger recombination rates, thus improving tuning range.
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