发明名称 |
Differential amplifier with input gate oxide breakdown avoidance |
摘要 |
A differential amplifier with input gate oxide breakdown avoidance amplifies a difference between two signals while maintaining voltage drops across transistor utilized in the differential amplifier to below a gate oxide breakdown level. A pull up structure added to a traditional differential amplifier allows the circuit to be utilized in IO pads of an integrated circuit and to be composed of thin oxide transistor normally only found in the core circuitry of the integrated circuit and. The pull up structure is composed of three thin oxide transistors, the first transistor is connected in series with the other two, and the other two connected in parallel with respect to each other.
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申请公布号 |
US6784729(B1) |
申请公布日期 |
2004.08.31 |
申请号 |
US20020218352 |
申请日期 |
2002.08.14 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GLAZEWSKI ROBERT A.;BUJANOS NORMAN |
分类号 |
H03K19/003;(IPC1-7):H03K19/018 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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