| 摘要 |
An ion beam deposition system for sputtering material layers comprising a vacuum chamber, a substrate positioned in the vacuum chamber, a first target holder capable of holding at least one target of a first material, said first target holder being positioned in the vacuum chamber, a second target holder capable of holding at least one target of a second material, said second target holder being positioned in the vacuum chamber, a first ion beam source for directing ions at the at least one target of the first material for depositing said first material onto the substrate, and a second ion beam source for directing ions at the at least one target of the second material for depositing said second material onto the substrate. Said deposition system includes a control system that allows materials to be deposited from the first and second target holder with negligible delay between the depositions.
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