| 发明名称 |
Gate structure and method |
| 摘要 |
MOSFET fabrication methods with high-k gate dielectrics for silicon or metal gates with gate dielectric deposition control including TXRF. TXRF permits analysis of gate (or capacitor) high-k dielectrics down to about 5 nm thickness.
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| 申请公布号 |
US6783997(B2) |
申请公布日期 |
2004.08.31 |
| 申请号 |
US20020325371 |
申请日期 |
2002.12.19 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROTONDARO ANTONIO L. P.;VISOKAY MARK R.;COLOMBO LUIGI |
| 分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/336;H01L21/66;H01L21/8238;H01L29/423;H01L29/51;(IPC1-7):H01L21/00;G01R31/26 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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