| 发明名称 |
Flash memory cell process using a hardmask |
| 摘要 |
A method is described for forming a memory structure using a hardmask (65). The hardmask (65) protects the second polysilicon layer (55) during a SAS etch process. In addition, sidewall structures (95) are formed which protect the inter-polysilicon dielectric layer (45) during the hardmask (65) etch process.
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| 申请公布号 |
US6784056(B2) |
申请公布日期 |
2004.08.31 |
| 申请号 |
US20030689947 |
申请日期 |
2003.10.21 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SCHNEIDER PAUL A.;MEHRAD FREIDOON;MACPEAK JOHN H. |
| 分类号 |
H01L21/28;H01L21/311;H01L21/3213;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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