| 摘要 |
PURPOSE: Provided is a lithographic method, which permits an exposure step and a development step to be performed simultaneously, avoids the problem of image blurring and excludes the effects of shield and non-linearity of neutrons. CONSTITUTION: The method for forming an image on a resist of a wafer by lithography using neutron beams comprises the steps of: (a) introducing radical neutron beams having directionality into a lens(100) having a through-hole(101) to perform the focusing of the radical neutron beams; (b) passing the radical neutron beams emitted from the lens to a mask(200) disposed at the bottom of the lens(100); and (c) introducing the radical neutron beams to a resist(400) of a wafer(300) to perform exposure and development simultaneously. |
