METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE DIMENSION CONTROLLABILITY OF RESIST PATTERN FOR FORMING TRENCH

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve dimension controllability of a resist pattern for forming a trench by preventing a filling material in the surface of a substrate from varying. CONSTITUTION: A via hole(3) connected to a basic interconnection(1) is formed in an interlayer dielectric(2) coating the basic interconnection. Conductive polymer(4) is formed in the via hole by an electroanalysis method. A resist pattern(5) is formed on the interlayer dielectric. A trench(6) connected to the via hole is formed by an etch process using the resist pattern as a mask.