| 摘要 |
THE ANTI-REFLECTIVE COATING COMPOSITION COMPRISING AT LEAST PERFLUOROALKYLSULFONIC ACID (A) REPRESENTED BY THE GENERAL FORMULA: CNF 2N+1SO3H (N IS AN INTEGER OF 4 TO 8), ORGANIC AMINE (B), WATER-SOLUBLE POLYMER (C), PERFLUOROALKYL SULFONAMIDE (D) REPRESENTED BY THE GENERAL FORMULA: CNF2N+1SO2NH2 (N IS AN INTEGER OF 1 TO 8) AND WATER (E) AND HAVING A PH VALUE OF 1.3 TO 3.3 IS APPLIED ONTO A PHOTORESIST FILM FORMED ON A SUBSTRATE, THUS FORMING AN ANTI-REFLECTIVE COATING. THE PHOTORESIST AND ANTI-REFLECTIVE COATING ARE THEN EXPOSED TO LIGHT AND DEVELOPED TO GIVE A RESIST PATTERN. THE COATING COMPOSITION CAN FORM A UNIFORM ANTI-REFLECTIVE COATING FREE OF STANDING WAVE, MULTIPLE REFLECTION, T-TOP AND PED (POST EXPOSURE DELAY) IN A SMALL AMOUNT OF DRIP ONTO ANY TYPES OF RESISTS REGARDLESS OF THE SURFACE SHAPE OF A SUBSTRATE.
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