| 摘要 |
A PLASMA PROCESSING METHOD AND APPARATUS, WHEREIN EVALUATION IS EFFECTED WHILE A SUITABLE GAS IS INTRODUCED INTO A VACUUM VESSEL (1), AND THEN A HIGH FREQUENCY VOLTAGE IS APPLIED BY A HIGH FREQUENCY DISCHARGE COIL POWER SOURCE (2) TO A SPIRAL DISCHARGE COIL (4) WHILE THE INTERIOR OF THE VACUUM VESSEL IS KEPT UNDER ADEQUATE PRESSURE, WHEREBY A HIGH FREQUENCY MAGNETIC FIELD IS GENERATED WITHIN THE VACUUM VESSEL THROUGH A DIELECTRIC PLATE (3) SO THAT ELECTRONS ARE ACCELERATED BY AN INDUCTION FIELD DUE TO THE HIGH FREQUENCY MAGNETIC FIELD TO GENERATE PLASMA WITHIN THE VACUUM VESSEL FOR PROCESSING A SUBSTRATE (6), CHARACTERIZEDIN THAT THE DIELECTRIC PLATE IS HEATED BY A PLANAR HEATER (10) TO 80°C. OR MORE, WHEREBY THE THICKNESS OF A THIN FILM TO BE DEPOSITED ON THE DIELECTRIC PLATE IS SUBSTANTIALLY REDUCED THEREBY TO INHIBIT DUST GENERATION AND THUSSUBSTANTIALLY REDUCE THE FREQUENCY OF MAINTENANCE REQUIRED FOR THE DIELECTRIC PLATE. THE APPARATUS INCLUDES A CERAMIC PLATE (8) FORMED WITH A DISCHARGE COIL FIXING GROOVE (9) AND MOUNTED ON THE DIELECTRIC PLATE, AND THE PLANAR SPIRAL DISCHARGE COIL IS MOUNTED ON THE CERAMIC PLATE. (FIG. 1)
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