| 摘要 |
Electro-optic device with a hole current circulation region comprising a p-doped layer (2) with a level L1, a barrier layer (4) with a level (L2) lower than L1, a p-doped layer (6) with a level (L3) different from L2, and a p-doped band adaptation layer (3) between layers (2) and (4) with a composition gradient providing a continuous transition in levels between L1 and L2, comprises a band transition layer (5) between layers (4) and (6) with a composition gradient providing a continuous transition in levels between L2 and L3. Electro-optic device with a vertical semiconductor structure comprising a hole current circulation region (R2) and an active layer (CA), where R2 comprises a p-doped first layer (2) with a valence band level L1, a barrier layer (4) with a valence band level (L2) lower than L1, a p-doped third layer (6) with a valence band level (L3) different from L2, and a p-doped band adaptation layer (3) between layers (2) and (4) with a composition gradient providing a continuous transition in levels between L1 and L2, comprises a band transition layer (5) between layers (4) and (6) with a composition gradient providing a continuous transition in levels between L2 and L3.
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