CHEMICAL MECHANICAL POLISHING METHOD FOR METAL LAYER INCLUDING THE WET ETCHING STEP

摘要

PURPOSE: A CMP method for metal layer including the wet etching step is provided to reduce largely a period of a fabrication process by performing a short wet-etch process and a chemical mechanical polishing process. CONSTITUTION: A CMP method for metal layer includes a process for removing and planarizing a metal layer by injecting a chemical polishing agent into the surface of a wafer(10) having a metal layer and performing a CMP process. The metal layer is partially removed by exposing the wafer to an etching chemical solution(40) corresponding to the metal layer before the CMP process is performed. The metal layer is formed with tungsten. The etching chemical solution is formed with the mixed solution of H2O2 and HNO3/HF.