发明名称 |
Methods for forming a capacitor on an integrated circuit device at reduced temperatures |
摘要 |
Methods of forming a capacitor on an integrated circuit include forming a lower electrode of the capacitor on an integrated circuit substrate. A protection layer is formed on the lower electrode at a temperature below a minimum temperature associated with a phase change of the lower electrode. A dielectric layer is formed on the protection layer. The protection layer is configured to limit oxidation of the lower electrode during forming of the dielectric layer. An upper electrode of the capacitor is formed on the dielectric layer.
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申请公布号 |
US2004166627(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030629407 |
申请日期 |
2003.07.29 |
申请人 |
LIM JAE-SOON;KIM SUNG-TAE;KIM YOUNG-SUN;HWANG KI-HYUN;NAM GAB-JIN;KIM KI-CHUL;LEE JOO-WON;PARK JAE-YOUNG |
发明人 |
LIM JAE-SOON;KIM SUNG-TAE;KIM YOUNG-SUN;HWANG KI-HYUN;NAM GAB-JIN;KIM KI-CHUL;LEE JOO-WON;PARK JAE-YOUNG |
分类号 |
H01L21/02;H01L21/314;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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