发明名称 |
Pressure contact type semiconductor device having dummy segment |
摘要 |
Each of outermost segments (OMSG) and innermost segments (IMSG) is utilized as a dummy segment. A top surface of a protruding portion (OMPP, IMPP) of each of the outermost segments (OMSG) and the innermost segments (IMSG) is covered with an insulating layer (1S+1P), and a clearance (CL) is provided between a top surface of the insulating layer (1S+1P) and a bottom surface (2BS) of a cathode strain relief plate. Each of all the other segments (SG) than the outermost and innermost segments has a protruding portion PP on which a cathode electrode (1K-AL) is formed. A thickness (T1) of the cathode electrode (1K-AL) is determined so as to allow a top surface of the cathode electrode (1K-AL) to be in contact with the bottom surface (2BS) of the cathode strain relief plate.
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申请公布号 |
US2004164316(A1) |
申请公布日期 |
2004.08.26 |
申请号 |
US20030617660 |
申请日期 |
2003.07.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NAKASHIMA NOBUHISA;FUKAURA TERUYA;OOTA KENJI |
分类号 |
H01L29/744;H01L21/52;H01L23/48;H01L29/417;H01L29/74;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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