| 摘要 |
PURPOSE: A method for forming a capacitor of a semiconductor device is provided to enhance stability and to improve step coverage by increasing the radius of curvature of a lower storage node electrode and a dielectric film. CONSTITUTION: A first conductive layer(3) and a sacrificial oxide layer are sequentially stacked on a lower insulating layer(10) having a contact hole(2). A second conductive spacer(6) is formed at both sidewalls of the stacked structure. The tip portion of the second conductive spacer is exposed by partially etching the sacrificial oxide layer. The exposed surface of the second conductive spacer is oxidized to round the tip portion(c), thereby increasing the radius of curvature. The oxidized portion of the second conductive spacer and the sacrificial oxide layer are removed, wherein the sacrificial oxide layer remains partially at the cross portion(d) of the first conductive layer, the second conductive spacer and the sacrificial oxide layer, thereby increasing the radius of curvature of a lower storage node with three-dimensional structure.
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