发明名称 |
RESISTANCE VARYING ELEMENT AND METHOD OF MANUFACTURING IT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance varying element superior in reliability for suppressing variation in the characteristic of a resistance varying element using a phase varying material for recording layer, and to provide a method of manufacturing it. <P>SOLUTION: The resistance varying element has a first electrode 3, and a dielectric layer 4 and a recording layer 7 with a contact hole 5 formed over them provided on a substrate 1. The recording layer 7 is sandwiched by the first electrode 3 and a second electrode 8. A resistance value of the layer 7 is varied by an electrical pulse impressed between the electrode 3 and the electrode 8. A contact layer 6 of the recording layer is formed between the dielectric layer 4 and the recording layer 7. The contact layer 6 is preferably formed by group 2-6 semiconductor (e.g. ZnS) and preferably includes SiO<SB>2</SB>. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004241535(A) |
申请公布日期 |
2004.08.26 |
申请号 |
JP20030028014 |
申请日期 |
2003.02.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MIYAMOTO AKITO;MORIMOTO TADASHI;TANAKA HIDEYUKI |
分类号 |
H01L27/10;H01L27/105;H01L45/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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