发明名称 RESISTANCE VARYING ELEMENT AND METHOD OF MANUFACTURING IT
摘要 <P>PROBLEM TO BE SOLVED: To provide a resistance varying element superior in reliability for suppressing variation in the characteristic of a resistance varying element using a phase varying material for recording layer, and to provide a method of manufacturing it. <P>SOLUTION: The resistance varying element has a first electrode 3, and a dielectric layer 4 and a recording layer 7 with a contact hole 5 formed over them provided on a substrate 1. The recording layer 7 is sandwiched by the first electrode 3 and a second electrode 8. A resistance value of the layer 7 is varied by an electrical pulse impressed between the electrode 3 and the electrode 8. A contact layer 6 of the recording layer is formed between the dielectric layer 4 and the recording layer 7. The contact layer 6 is preferably formed by group 2-6 semiconductor (e.g. ZnS) and preferably includes SiO<SB>2</SB>. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004241535(A) 申请公布日期 2004.08.26
申请号 JP20030028014 申请日期 2003.02.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIYAMOTO AKITO;MORIMOTO TADASHI;TANAKA HIDEYUKI
分类号 H01L27/10;H01L27/105;H01L45/00 主分类号 H01L27/10
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